Laboratory of Infrared Material and Devices

Xiang Shen (沈祥)

The Research Institute of Advanced Technologies
Ningbo University 
Ningbo 315211, China
Tel: 86-574-87609873, Email: 


PhD Physical Electronics, Shanghai Institute Of technical physics, CAS, China, 2009
MS Communication and Information System, Ningbo University, China, 2004
BSc Electronical and Information Engeering, Ningbo University, China, 1998

Work Experiences

2005.03-2014.07, Lecture/Assistant Professor, College of Information Science and Engineering, Ningbo University
2014.08-Present, Assistant Professor/Professor, The Research Institute of Advanced Technologies, Ningbo University

Visiting Experiences

2011.11-2012.01, Laser Physics Centre, Australian National University, Canberra. (Prof.  Luter-Davies, Barry)
Research Interests
Alloy Chalcogenide films for Phase Change Materials
Chalcogenide Waveguide for Nonlinearity or Infrared sensors


1.Sen Mu, Yimin Chen, Hongbo Pan, Junqiang Wang, Rongping Wang*, Xiang Shen*, Shixun Dai, Tiefeng Xu, Qiuhua Nie, Understanding the Fast Crystallization Kinetics of In-Sb-Te by Ultrafast Calorimetry, CrystEngComm, 2018, 20, 159-163.
Before 2018:
1Yimin Chen, Guoxiang Wang, Lijian Song, Xiang Shen*, Junqiang Wang, JunTao Huo, Rongping Wang, Tiefeng Xu, Shixun Dai, Qiuhua Nie, Unraveling the crystallization kinetics of supercooled liquid GeTe by ultrafast calorimetry. Crystal Growth & Design, 2017, 17(7): 3687-3693;
2Zhikai Li, Xiang Shen*, Guoxiang Wang, Rongping Wang*, Shixun Dai, Tiefeng Xu, Qiuhua Nie, Concentration-dependent and enhanced luminescence in Ge23.5Ga11.5Se65 glasses and glass-ceramics doped with Er3+, Optical Materials, 2017, 67:1-6;
3Yimin Chen, Sen Mu, Guoxiang Wang, Xiang Shen, Junqiang Wang, Shixun Dai, Tiefeng Xu, Qiuhua Nie, Rongping Wang. Resolving glass transition in Te-based phase-change materials by modulated differential scanning calorimetry. Applied Physics Express, 2017, 10(10): 105601;
4Sen Zhang, Yimin Chen, Rongping Wang*, Xiang Shen*, Shixun Dai, Observation of photobleaching in Ge-deficient Ge16.8Se83.2 chalcogenide thin film with prolonged irradiation. Scientific Reports, 2017, 7: 14585;
5Yimin Chen, Xiang Shen*, Guoxiang Wang, Tiefeng Xu, Rongping Wang, Shixun Dai, Qiuhua Nie, The feasibility of Sn, In, Al doped ZnSb thin film as candidate for phase change material, Journal of Applied Physics, 2016, 120 (1):015301;
6Guoxiang Wang*, Yimin Chen, Xiang Shen*, Yegang Lu, Shixun Dai, Qiuhua Nie, Tiefeng Xu, Controllable formation of nano-crystalline in Sb4Te films by Zn doping, Journal of Applied Physics, 2015, 117,045303;
7Xiang Shen*, Yimin Chen, Zhanshan Wang, Yegang Lu, and Shixun Dai, Improved phase change behavior of Sb3Te material by ZnSb doping for phase change memory, Applied Physics A, 2015, 119(2): 425-429;
8Yimin Chen, Guoxiang Wang, Xiang Shen*, Tiefeng Xu*, R.P.Wang, Liangcai Wu, Qiuhua Nie, Junjian Li, Yegang Lu, Shixun Dai, Crystallization behavior of ZnxSb100-x films for ultralong data retention application, Crystengcomm, 2014, 16(5):757-762;
9Guoxiang Wang, Yimin Chen, Xiang Shen*, Junjian Li, Rongping Wang, Yegang Lu, Shixun Dai, Tiefeng Xu, Qiuhua Nie, Reversibility and stability of ZnO-Sb2Te3 nanocomposite films for phase change memory applications, ACS Applied Materials & Interfaces, 2014, 6 (11): 8488–8496;
10Xiang shen*, Guoxiang wang, Rongping Wang, Shixun Dai, Liangcai Wu, Yimin Chen, Tiefeng Xu, Qiuhua Nie, Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application, Applied Physics Letters, 2013, 102;131902.